Abstract
We examined the influence of memristor geometry on switching endurance by comparing ribbed and planarTiO2-based cross-pointdevices with 50 nm × 50 nm lateral dimensions. We observed that planar devices exhibited a factor of over fourimprovement in median endurance value over ribbed structures for otherwise identicalstructures. Our simulations indicated that the corners in the upper wires of the ribbeddevices experienced higher current density and more heating during device forming andswitching, and hence a shorter life time.
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