Abstract
The impact of gate misalignment on the performance of dopant-segregated Schottky Barrier MOSFET (DS SBTs) and on the carrier transport is investigated by Monte Carlo method. The simulation results show that gate misalignment with dopant-segregated structure (DSS) has less significant impact on drain current than that without DSS. The influence of gate misalignment with DSS becomes notable only when drain voltage is high enough, while gate misalignment without DSS affects drain current always no matter how much drain voltage is. For carrier transport, our results demonstrate that maximal velocity at source side of DS SBTs without gate misalignment shows saturation, while saturation doesn’t exist in DS SBTs with gate misalignment.
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