Abstract
The superiority of highly doped accumulation-mode n-MOSFETs over the conventional inversion-mode ones has been acknowledged in this paper, not only in terms of electrical performances but also in terms of noise level. These results, in addition to those regarding accumulation-mode p-MOSFETs, demonstrate that an improved CMOS technology built on simultaneously high-speed and low-noise accumulation-mode MOSFETs has been achieved, paving the way towards more reliable and faster microprocessors.
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