Abstract
In this study, we have used the impedance measurement to investigate the carrier transport in different diode structures fabricated with a well characterized organic hole transport material, m-MTDATA. It is demonstrated that the carrier injection level can be controlled by properly designing the device structures. In such devices, the field dependence of carrier mobility is observed to be very different since the injected carriers experienced distinct disordered during the transport due to varying carrier injection level. With a proper control of the device structure, the field dependence is observed to have negative P-F coefficient for carriers injected into high energy transport states. Finally, all the transport parameters involved in the classical Gaussian Disorder Model is derived successfully under certain assumption.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.