Abstract
The impact of defects on the electrical properties of bismuth ferrite thin films has been studied. Secondary phases and oxygen vacancies were the main defects considered. Thin films with secondary phases show higher conductivities than single-phase films. Monophasic films annealed in oxygen atmosphere shows lower conductivity than the non-annealed film. For selected thin film with secondary phase, the relaxation in the grain boundary was predominant with activation energy eV, suggesting the first ionization oxygen vacancies as the relaxation mechanism in the studied films. The electric field effect on relaxation processes was similarly to Arrhenius thermally activated process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
