Impact of c-Si Substrate and Front Surface Passivation on Interdigitated Back Contact Silicon Heterojunction Solar Cell with 2D Simulation Study

Abstract

This paper shows the interdigitated back contact heterojunction solar cell design that employed the advantage of amorphous/crystalline silicon technology. The front surface is passivated by a double layer of FSF doped (n++) crystalline silicon and silicon nitride, which also provides an antireflection coating. In the rear side the emitter and the back contact are formed by amorphous/crystalline silicon heterostructure and fabricate the rear junction of the cell. To achieve accurate IBC-SiHJ modelling, we use ATLAS 2-D device simulation software. We here focus on IBC-SiHJ structure on n-type c-Si simulations varying the values of the following parameters: bulk lifetime, surface recombination velocity at both front and back surfaces, bulk thickness for verified the influence of the substrate quality. The influence of these parameters has been tested by generating the current- voltage (I-V). We conclude that the solution to achieve high efficiency (21.47%) is a high crystalline substrate quality, low surface recombination velocity especially at the front surface.