Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation

Abstract

This letter reports interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells which combine the performance benefits of both back contact and heterojunction technologies while reducing their limitations. Low temperature (<200°C) deposited p- and n-type amorphous silicon used to form interdigitated heteroemitter and contacts in the rear preserves substrate lifetime while minimizes optical losses in the front. The IBC-SHJ structure is ideal for diagnosing surface passivation quality, which is analyzed and measured by internal quantum efficiency and minority carrier lifetime measurements. Initial cells have independently confirmed efficiency of 11.8% under AM1.5 illumination. Simulations indicate efficiencies greater than 20% after optimization.