Abstract
High-frequency performance of graphene field-effect transistors (GFETs) has been limited largely by parasitic resistances, including contact resistance (RC) and access resistance (RA). Measurement of short-channel (500 nm) GFETs with short (200 nm) spin-on-doped source/drain access regions reveals negligible change in transit frequency (fT) after doping, as compared to ∼23% fT improvement for similarly sized undoped GFETs measured at low temperature, underscoring the impact of RC on high-frequency performance. DC measurements of undoped/doped short and long-channel GFETs highlight the increasing impact of RA for larger GFETs. Additionally, parasitic capacitances were minimized by device fabrication using graphene transferred onto low-capacitance quartz substrates.
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