Abstract
Optically controlled MESFET are useful device for optical communication and as photodetectors. Mobility and life time of carriers are strongly function of impurity concentration. In this paper the IV characteristerstics of an opaque gate Optically controlled MESFET is presented at the low impedance state of the device. Considering concentration dependent carrier mobility and life time of carrier. The result indicate that the concentration dependent mo Mobility and life time have strong effect on optical controlled opaque gate MESFET characteristics.
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