Abstract
Polycrystalline PbSe has the potential to be a V-HOT FPA capable of achieving 50 mK NETD sensitivity with pixel pitch less than 25 μm. However, current approaches using CBD have major reproducibility deficiencies. PVD approaches still struggle with sensitivity and carrier sweep-out. SJOS has explored a variety of PbSe approaches and determined the balance between carrier lifetime, mobility, dark current, and spectral QE that must be achieved in order to produce detectors that have low 1/f noise, high responsivity, and can fabricated reliably. SJOS detectors having these features are to be demonstrated in this presentation We will present data on the microstructure, blackbody performance data, and carrier mobility and lifetime for halogen passivated PbSe that can meet these demands.
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