Impact of Channel Length Reduction and Doping Variation on Multigate FinFETs

Abstract

In this paper we report simulation results of various multigate FinFET (MugFET) structures using SILVACO TCAD software. We simulate Tri gate, Pi gate, Omega gate and Gate all around (GAA) device structures with varied gate length and doping density and also obtain some of their electrical parameters via simulation. We show that variation in gate length and doping concentration directly affect the key electrical parameters of FinFET structures. The change in current voltage characteristics due to scaling of these devices down to nanometer range (from 16 nm to 4 nm) have been investigated with associated short channel effects (SCE). We have found results that are expected from physics-reduced on current, increased DIBL, increased subthreshold swing, lower on/off ratio etc. Our investigation aims to propose GAA as the best FinFET candidate among discussed MugFETs in sub 16 nm technology on basis of SCE handling criteria.