Abstract

We investigate the impact of carrier-carrier scattering on the gain recovery dynamics of a quantum dot (QD) semiconductor optical amplifier. Simulations, based on semiconductor Bloch equations with microscopically calculated Coulomb scattering rates between the carrier reservoir and the QDs, show a very good agreement with experimentally obtained pump-probe dynamics over a range of injection currents. With the microscopically obtained scattering rates at hand, we can conclude that fast cascading relaxation processes between the two-dimensional carrier reservoir and the QDs in combination with carrier heating enhancing the scattering efficiency drives the ultrafast gain recovery observed in QD based semiconductor devices.

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