Abstract
Reliability of the gate oxide is influenced by the device structure and the processes. In the SiC MOSFET, the surface morphology is degraded by the high temperature activation RTA, and the degradation is remarkable on the n+ source region. This study develops the method to suppress the degradation of the reliability of the gate oxide on the carbon face. By utilizing the carbon cap for the RTA and the high density O2 plasma etching to remove the carbon cap, the reliability is drastically improved both on the un-implanted and the implanted surfaces. Especially, the degradation of the reliability is perfectly suppressed on the un-implanted surface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
