Abstract
We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement.
Highlights
Growth of size and density controlled GaAs / In x Ga 1 − x As / GaAs ( x = 0.10 ) nanowires on anodic alumina membrane-assisted etching of nanopatterned GaAs
We demonstrate the effect of artificial lateral quantum confinement on excitonspin relaxation in a GaAs electronic system
GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates
Summary
Takayuki; Tanaka, Toru; Tamura, Yosuke; Higo, Akio; Thomas, Cedric; Samukawa, Seiji; Murayama, Akihiro. Instructions for use Hokkaido University Collection of Scholarly and Academic Papers : HUSCAP.
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