Abstract
This study investigates the impact of the arsenic and phosphorus concentration on the oxygen content in heavily doped silicon crystals. The resistivity and the oxygen measurements were made on 200 mm crystals grown with the Czochralski method. The oxygen concentration, measured by Gas Fusion Analysis, decreases with the increase of dopant concentration. Two mechanisms related to the effect of the arsenic and phosphorus concentration on the oxygen contents are discussed: one is the possible inhibition of the oxygen segregation inside the silicon crystal due to the lattice deformation and the other is the oxygen evaporation enhancement from the melt through dopant-oxides formation.
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