Impact of Al2O3 spacers on the improvement in short-channel effects for the mesa-shaped vertical-channel In-Ga-Zn-O thin-film transistors with a channel length below 100 nm

Abstract

To achieve a channel length scaling and an improvement in short-channel effect (SCE) for the mesa-shaped vertical thin-film transistors (VTFTs) using In-Ga-Zn-O (IGZO) channels prepared by atomic layer deposition (ALD), the impacts of two strategic approaches were investigated: the introduction of an ALD Al2O3 spacer and the modulation of ALD oxidants. The Al2O3 spacers were patterned with sound profiles by means of a hybrid-etching technique combining a wet- and plasma dry-etching processes to form vertical sidewalls corresponding to a channel length. For the cases when the Al2O3 spacers were prepared with H2O oxidant, the IGZO VTFT with an In/Ga ratio of 1.7 showed the degradations in device characteristics including a turn-on voltage (VON) of −8.0 V and a subthreshold swing (SS) of 1.50 V/dec. When the In/Ga ratio was increased to 2.9, the device failed to be operated with conductive properties. The excess hydrogen contained within the Al2O3 spacer was suggested to be thermally diffused into the IGZO from the back-channel interface, leading to marked increase in the number of conduction carriers within the channel. To suppress the doping effect of hydrogen from the spacer, the ALD oxidant was strategically modulated to O3. As results, the VON and SS of the IGZO VTFT were markedly improved to be −2.0 V and 0.483 V/dec, respectively. Additionally, the drain induced barrier lowering coefficient was also significantly enhanced from 2.9 to 0.13 V/V, demonstrating the excellent immunity against the SCE for the IGZO VTFTs with nanoscale channel lengths. It was concluded from these findings that the spacer engineering can be one of the most important guides for the implementation of IGZO VTFTs with channel lengths below 100 nm.