Abstract

In this work, the preparation of Zinc Oxide (ZnO) films by ultrasonic spray pyrolysis at low-temperature and its application in thin-film transistors (TFTs) are presented, as well, the impact of the active layer thickness and gate dielectric thickness in the electrical performance of the ZnO TFTs. A thinner active layer resulted in better transfer characteristics such as higher on/off-current ratio, while a thicker active layer resulted in better output characteristics. The ZnO films were deposited from 0.2M precursor solution of Zinc acetate in methanol, using air as carrier gas on a hotplate at 200°C. The ZnO films obtained at 200°C were characterized by optical transmittance, Photoluminescence spectroscopy and X-ray diffraction.

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