Abstract
Anisotropy of the impact ionization coefficients of 4H silicon carbide is investigated by means of the avalanche breakdown behavior of p+n diodes on (0001) and (112¯0) 4H silicon carbide epitaxial wafers. The impact ionization coefficients are extracted from the avalanche breakdown voltages and the multiplication of a reverse leakage current, due to impact ionization of these p+n diodes. The breakdown voltage of a p+n diode on a (112¯0) wafer is 60% of that on a (0001) wafer, and the extracted impact ionization coefficients of 4H silicon carbide show large anisotropy. We have shown that the anisotropy of the impact ionization coefficients is related to the anisotropy of carrier heating and drift velocity, which are due to the highly anisotropic electronic structure of 4H silicon carbide.
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