Abstract
The photoluminescence intensity at 1.8 K of deep and shallow bound excitons, free excitons and electron-hole droplets in silicon is investigated in a weak electric field. The photoluminescence as well as the photocurrent was detected with simultaneous pulsed excitation of both laser light and electricfield. The luminescence i s quenched due to impact ionization by field accelerated hot electrons and holes starting around 50-100 V/cm for the shallow bound excitons, depending on sample purity and excitation intensity. The deeply bound excitons increase in intensity with applied field and are difficult to completely quench before the electrical breakdown of the sample. The impact ionization of the free excitons is very sensitive to the presence of the electron-hole droplet phase. No significant difference between n- and p-type samples was observed.
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