Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor

Abstract

The weak dependence of the Tunnel Field Effect Transistor (TFET) device characteristics on temperature provides an edge over the conventional MOSFETs in terms of its reliable operation over a wide temperature range applications. This study focusses on the analog/RF performance comparison of DG-TFET and DG-MOSFET, and the impact of temperature variations on some of the key parameters like VIP3 and intrinsic device gain (gm*Rout) and the variation of the optimum bias point. In the study of linearity and analog performance, gm3 (third order derivative of Ids−Vgs), VIP3 in conjunction with intrinsic gain are considered to select the optimum bias point to achieve high gain and better linearity performance. The impact of temperature variations on the ambipolar behavior of a TFET has also been studied.