Abstract
The dislocation motion in Czochralski (Cz) silicon containing oxygen precipitates of different densities and sizes has been experimentally investigated in order to identify the strengthening mechanism of oxygen precipitates. The correlation of rosette sizes and oxygen precipitate densities and sizes was investigated quantitatively in terms of dispersion and precipitation strengthening mechanism. It is found that the precipitation strengthening mechanism is much more appropriate to account for the immobilization effect of oxygen precipitates on dislocations as compared to the dispersion strengthening mechanism.
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