Abstract
We report on investigation of a self-mixing effect in integrated voltage-control oscillator (VCO). The VCO is fabricated using bipolar transistors in a 130 nm SiGe BiCMOS technology. It employs a differential Colpitts configuration and is optimized for emission at fundamental harmonic. The radiation is outcoupled through the substrate side using a hyper-hemispheric silicon lens. The source emits up to 0.3 mW of propagating power, tuneable in the frequency range from 258 to 262 GHz. A feedback radiation produces a self-mixing current which can be measured either in dc regime or by employing signal modulation techniques. We show the applicability of self-mixing effect to form reflection-type images.
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