Imaging one-dimensional and two-dimensional planar photodiode detectors fabricated by ion milling molecular beam epitaxy CdHgTe

Abstract

Imaging one-dimensional (1-D) and two-dimensional (2-D) arrays of mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) planar photodiodes were fabricated by ion milling of vacancy-doped molecular beam epitaxy CdxHg1−xTe layers. Sixty-four-element 1-D arrays of 26×26 µm2 or 26×56 µm2 diodes were processed. Zero-bias resistance-area values (R0A) at 77 K of 4×106 Θcm2 at cutoff wavelength λCO=4.5 µm were measured, as well as high quantum efficiencies. To avoid creating a leakage current during ball bonding to the 1-D array diodes, a ZnS layer was deposited on top of the CdTe passivation layer, as well as extra electroplated Au on the bonding pads. The best measured noise equivalent temperature difference (NETD) on a LWIR array was 8 mK, with a median of 14 mK for the 42 operable diodes. The best measured NETD on a MWIR array was 18 mK. Two-D arrays showed reasonably good uniformity of R0A and zero-bias current (I0) values. The first 64×64 element 2-D array of 16×16 µm2 MWIR diodes has been hybridized to read-out electronics and gave median NETD of 60 mK.