Abstract
The scanning tunneling microscope is used to image properties of the buried NiSi2/Si(111) metal–semiconductor interface using electron interferometry. This technique reveals the presence of multiple domains in conductance images that are not visible in topographic images. The multiple domains are explained in terms of silicide regions of different thicknesses that are separated by step domain boundaries at the buried interface. The possible influence of these extrinsic defects on the formation of the Schottky barrier and on local real space characterization techniques used to measure Schottky barrier heights are discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
