Imaging and local current transport measurements of AlInP quantum dots grown on GaP

Abstract

Individual AlInP self-assembled quantum dots grown on a (100) GaP substrate are imaged and probed using ballistic electron emission microscopy (BEEM). The excellent nanometer scale lateral resolution of BEEM is utilized to inject carriers directly into a single quantum dot, and thus, current transport through the dot investigated without any direct electrical contact. The BEEM spectra taken on and off the dot revealed a local conduction-band offset between GaP and AlInP with a barrier height of ΔEc∼0.13±0.01 eV.