Abstract
Ballistic Electron Emission Microscopy (BEEM) has been shown to be a powerful tool for nanometer-scale characterization of the spatial and electronic properties of semiconductor structures. In this article, we will discuss general aspects of BEEM experiment and theory in true ballistic and quasi-ballistic hot carrier transport. We will review the current state and recent progress in the use of the BEEM imaging and spectroscopy to study metal-semiconductor and metal-insulator-semiconductor interfaces, buried semiconductor heterojunctions and novel quantum objects. Various theoretical BEEM models are discussed, and their ability to describe BEEM experiments is examined. Special attention is drawn to the role of the electron scattering in the metal base layer, at the metal–semiconductor interface and in the semiconductor heterostructure on BEEM spectra.
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