Abstract
Silicon photonics (SiPh) enables compact photonic integrated circuits (PICs), showing superior performance for a wide variety of applications. Various optical functions have been demonstrated on this platform that allows for complex and powerful PICs. Nevertheless, laser source integration technologies are not yet as mature, hampering the further cost reduction of the eventual Si photonic systems-on-chip and impeding the expansion of this platform to a broader range of applications. Here, we discuss a promising technology, micro-transfer-printing (μTP), for the realization of III-V-on-Si PICs. By employing a polydimethylsiloxane elastomeric stamp, the integration of III-V devices can be realized in a massively parallel manner on a wafer without substantial modifications to the SiPh process flow, leading to a significant cost reduction of the resulting III-V-on-Si PICs. This paper summarizes some of the recent developments in the use of μTP technology for realizing the integration of III-V photodiodes and lasers on Si PICs.
Highlights
Silicon photonics (SiPh) is emerging as a promising platform for building complex and powerful photonic integrated circuits (PICs)
This paper summarizes some of the recent developments in the use of μTP technology for realizing the integration of III-V photodiodes and lasers on Si PICs
We review our recent results on the heterogeneous integration of III-V lasers and photodiodes on Si PICs through the μTP approach
Summary
Silicon photonics (SiPh) is emerging as a promising platform for building complex and powerful photonic integrated circuits (PICs). Micro-transfer-printing (μTP) is a novel integration technique developed by the Rogers group at the University of Illinois in 2004.11,12 This technique allows for the manipulation of micrometer-sized thin films/thin film devices and enables the transfer of these thin film devices in a massively parallel manner (ensuring high throughput integration, as a single printing cycle only takes 30–45 s) from a source substrate to a target substrate with high alignment accuracy By using this approach, the efficiency of the use of source materials can be significantly improved and different materials/devices can be intimately integrated on a common substrate.
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