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Abstract
Silicon is the dominant semiconductor in many semiconductor device applications for a variety of reasons, including both performance and cost. III-V materials exhibit improved performance compared to silicon, but currently, they are relegated to applications in high-value or niche markets, due to the absence of a low-cost, high-quality production technique. Here we present an advance in III-V materials synthesis, using a hydride vapor phase epitaxy process that has the potential to lower III-V semiconductor deposition costs, while maintaining the requisite optoelectronic material quality that enables III-V-based technologies to outperform Si. We demonstrate the impacts of this advance by addressing the use of III-Vs in terrestrial photovoltaics, a highly cost-constrained market.
Highlights
Silicon as a semiconductor technology is beginning to run into significant technical limits.The death of Moore’s Law has been predicted for decades, but there is a clear evidence that transistor size limits have been reached, and improvements are only being realized through increases in complexity and cost
To enable abrupt heterointerfaces vital to high performance III-V devices, but still maintain a high throughput, we developed a dynamic hydride vapor phase epitaxy (D-Hydride vapor phase epitaxy (HVPE)), a new route to low-cost III-V growth
We demonstrated the ability for D-HVPE to grow high-efficiency devices with a performance equivalent to that of conventional metal organic vapor phase epitaxy (MOVPE), validating this new technology for the manufacture of high-performance III-V opto-electronic devices
Summary
Silicon as a semiconductor technology is beginning to run into significant technical limits. In this approach, abrupt heterointerfaces are formed through the translation of a substrate from one growth chamber to another, each of which has an independently established, steady-state deposition reaction for the III-V material to be grown. Employment of an in-line deposition process provides a pathway towards significant throughput increases and associated cost reductions, similar to how in-line deposition techniques already provide low-cost fabrication of thin-film PV devices, e.g., CdTe. Figure 2 shows a schematic of what the growth process will look like μm/h for GaAs [5], the use of low-cost, elemental metal sources in the reaction, and a high utilization of the source materials, hydride gases. D-HVPE technique, for solar cells, but for all III-V device applications
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