Abstract
Progress in advanced material growth techniques such as molecular beam epitaxy has made it possible to grow a variety of new materials with novel properties for novel device applications. The magnetic properties of transition metals in semiconductors, for example, are of growing interest for the development of magnetoelectronic devices. As this new research field has emerged, a variety of new materials and artificial structures has been the subject of intensive study. Among them, diluted magnetic III–V semiconductors are expected to combine the properties of both magnetic materials and of semiconductors.
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