Abstract
The growing complexity and functionality of modern microwave systems put increasing demands on the performance and reliability of RF control devices. Low channel sheet resistance in the on-state and small leakage currents in the off-state, extremely high breakdown voltages, chemical inertness and planar structure make III-nitride heterostructure-based devices uniquely suitable for the next-generation switching devices. The AlInN-based devices and devices using low-conducting layers for controlling surface field and surface charges are expected to further boost the performance. This paper presents a review of III-nitride control devices based on heterostructure field-effect transistors (HFETs), insulated gate HFETs (MISHFETs) and novel capacitively coupled contact and frequency configurable electronics technologies.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
