Abstract
Indium gallium zinc oxide thin film transistors(IGZO-TFTs) with bottom-gate top structure were fabricated on n-type silicon substrates using radio frequency(RF) magnetron sputtering method.Three kinds of metal material such as Au,Cu,and Al were used to fabricate electrode,respectively,and the effects of different electrode materials on IGZO TFT performance were investigated. The output characteristic and transfer characteristic of the TFT devices were tested. The best performance was obtained when Au was used to fabricate electrode,its saturation output current was 17. 9 μA,and on-off current ratio was up to 1. 4 ×106. In addition,the contact characteristics between three kinds of electrodes and IGZO thin film were analyzed based on their work function. Au electrode had the smallest contact resistance of these three metal according to the TLM(transmission line model) theory.
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