Abstract
With the increasing demand for transparent/flexible displays, healthcare sensors, and robotics, there is a need to advance the development of thin-film transistors (TFTs) manufacturing and large-scale circuits. This paper has proposed an IGZO-TFT-PDK to aid the educators and research community to explore the circuit design space of dual-gate IGZO-TFT devices. To solve the tensile force-induced current variation problem in IGZO-TFT devices, an omni-directional device and its layout template with a compensation methodology that mitigates its variation are proposed. A layout template is also proposed to speed up the design development flow of both analog and digital IGZO-TFT circuits. Based on the proposed layout template, a tensile force-insensitive standard cell library is proposed. We have implemented a 32-bit carry select adder to validate the usability of the standard cell library.
Highlights
T HE DEMANDS for thin-film transistors (TFTs) have become prominent in transparent/flexible displays, healthcare sensors, and robotics due to their material flexibility and cheap manufacturing costs [1]–[4]
Besides the absence of open-source process design kit (PDK) for the community, there are several design challenges in using these TFT devices for flexible electronics before they can be broadly developed in the generation of IoT and wearable products [5], [6]
IGZO-TFT PDK AND STANDARD CELL LIBRARY To provide more opportunities for colleges, universities, and research institutions to design large-scale, highly integrated flexible electronics, this paper presents an open-source IGZO-TFT PDK and standard cell library, which fully support the design flow from schematic to layout and verification
Summary
T HE DEMANDS for thin-film transistors (TFTs) have become prominent in transparent/flexible displays, healthcare sensors, and robotics due to their material flexibility and cheap manufacturing costs [1]–[4]. To solve the tensile force-induced current variation problem in IGZO-TFT devices (Fig. 1), an omni-directional device and its layout template with a compensation methodology that mitigates its variation are proposed. The tensile force-induced variation in the carrier mobility and threshold voltage of the IGZO-TFT device can result in variation of the current flowing through the IGZO-TFT channel. The section focuses on the design methodology of the omni-directional IGZO-TFT layout template and standard cell library for analog and digital circuit design, respectively. OMNI-DIRECTIONAL IGZO-TFT LAYOUT TEMPLATE The physical design of omni-directional transistor (Fig. 3) aims to minimize the local tensile force-induced current variation, which is highly suitable for small-scale analog circuit design.
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