Abstract
Numerical techniques have been used to obtain the field distribution in IGFETs under saturated bias conditions. The numerical solution of Poisson's equation is obtained with fewer simplifying assumptions than are necessary to obtain an analytic solution. The numerical solution is used to calculate the change in channel length as bias values are varied. These changes are used to predict the voltage dependences of drain current, drain conductance and transconductance in saturation. The potential solutions also permit a rough calculation of breakdown voltages. A comparison is made between the theoretical results and measurements on IGFETs of varying dimensions and doping concentrations.
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