Abstract
The topmost atom of InP (001) surfaces, which were annealed at temperatures between 300 and 550°C or sputtered with 1 keV Ar+ at 300°C in ultra high vacuum, has been directly identified by means of coaxial impact collision ion scattering spectroscopy (CAICISS). Time-of-flight spectra of the annealed InP (001) surface exhibited both In and P peaks in both\([\overline {\text{1}} {\text{ }}10]\) azimuth and in [100] azimuth, which revealed that the topmost layer of annealed InP (001) was comprised of In-terminated and P-terminated surfaces. On the other hand, time-of-flight spectrum of the InP (001) sputtered at 300°C revealed only an In peak in\([\overline {\text{1}} {\text{ }}10]\) azimuth and revealed both In and P peaks in [100] azimuth. This result indicates that the topmost layer on the Ar+-sputtered InP (001) surface was completely terminated by In atoms. Furthermore, we indicate that surface damage induced by this sputtering treatment is little. The azimuthal depen-dence of CAICISS intensity scattered from In and P showed twofold symmetry with respect to [100] direction, which originated from the zinc-blende structure.
Published Version
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