Abstract

The terminating structure of 6H–SiC(0001) substrates fabricated by the Acheson method was directly identified by means of coaxial impact collision ion scattering spectroscopy (CAICISS). The CAICISS spectra showed that the topmost surfaces of the samples were Si-terminated planes for both the front and rear faces. It was also shown that the (0001)Si face was composed of Si-terminated flat terraces and steps, the height of which corresponded to one-half the unit cell length along the 6H–SiC c axis.

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