Abstract
The Ohmic-contact formation mechanism in furnace alloyed Au/Te/Au/(n-type GaAs) structures is investigated by the combined application of M\"ossbauer spectroscopy, x-ray diffraction, Raman scattering, and Auger-electron-spectroscopy depth profiling. A dominant shallow-donor-dopant behavior of the Te atoms (substitutional on As sites) can be questioned. The observed low-resistance conductivity is related to the presence of a (${\mathit{n}}^{+\mathrm{\ensuremath{-}}}$type ${\mathrm{Ga}}_{2}$${\mathrm{Te}}_{3}$)/(n-type GaAs) heterojunction. Although the possibility of some residual n-type doping of the GaAs substrate remains, evidence is adduced that, in the Ohmic-contact formation mechanism, at least an equally important role is played by a degenerate As n-type doping of the ${\mathrm{Ga}}_{2}$${\mathrm{Te}}_{3}$. Similar arguments are developed for the (Au-Ge)/(n-type GaAs) and Ge/Pd/(n-type GaAs) Ohmic-contact systems.
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