Abstract
Raman scattering spectra and transmission electron microscope are applied to 6H-SiC wafers. 15R-SiC polytype inclusion appears in 6H-SiC wafer. The proportion of 15R-SiC polytype inclusion decreases obviously by controlling temperature of growth surface and top powder via adjusting monitored temperature and relative position between the crucible and coils at certain interval in physical vapor transport method. When the temperature is below 2,100 °C, 15R-SiC polytype still exists in the 6H-SiC crystal; when the temperature is up to 2,100–2,300 °C and the relative position of crucible is suitable, there exists almost only 6H-SiC polytype in the whole wafer.
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