Identical Pulse Programming Based Ultra-Thin 5 nm HfZrO2 Ferroelectric Field Effect Transistors with High Conductance Ratio and Linearity Potentiation Learning Trajectory

Abstract

This study systematically investigates identical pulse stimulation for potentiation machine learning to achieve a linear potentiation non-linearity (α P) equal to 1.25 and a high conductance ratio >1,000x with 5 nm-thick HfZrO2 (HZO) ferroelectric field effect transistors (FeFET). The trade-off characteristics between conductance ratio and linearity are exhibited. The higher remnant polarization (Pr) for memory window (MW) enhancement leads to an increasing conductance ratio but degrades the non-linearity of the training curve. The optimized stimulation condition for the identical pulse is performed with a pulse width of 50 ns and low access voltage for HZO thicknesses from 15 to 5 nm. These highlighted merits provide an opportunity to integrate emerging devices such as computing-in-memory (CIM) applications in the future.