Abstract
A technique for achieving square-shape quantum wells (QWs) against the intrinsic polar discontinuity and interfacial diffusion through self-compensated pair interlayers is reported. Ultrathin low-and-high % pair interlayers that have diffusion-blocking and self-compensation capacities is proposed to resist the elemental diffusion at nanointerfaces and to grow the theoretically described abrupt rectangular AlGaN/GaN superlattices by metal-organic chemical vapor deposition. Light emission efficiency in such nanostructures is effectively enhanced and the quantum-confined Stark effect could be partially suppressed. This concept could effectively improve the quality of ultrathin QWs in functional nanostructures with other semiconductors or through other growth methods.
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