Abstract
Interface state density distributions and hole capture cross sections have been determined as a function of the energy for MOS structures made with anodic oxides on p-type GaSb by the ICTS (isothermal capacitance transient spectroscopy) technique. The interface state density increases towards the band edge from 3×1011 to 1×1012/cm2eV in the energy range of 0.3 to 0.03 eV above the valence band.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
