Abstract
Studies of charge transport uniformity in bulk CdTe:Cl have been carried out using ion-beam-induced charge (IBIC) imaging. High resolution maps of charge collection efficiency, mobility-lifetime product (μτ), and drift mobility (μ) were measured using a scanning microbeam of 2 MeV protons focused to a beam diameter of ∼3 μm. Excellent charge transport uniformity was observed in single crystal CdTe:Cl, with electron μτ values of up to 5 × 10−3 cm2/V s. The presence of extended defects such as tellurium inclusions was also studied using IBIC, and their influence on the charge transport performance of CdTe detector structures is discussed.
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