Abstract
We present a spatially resolved contactless method for the study of electronic and thermal transport in semiconductors. The technique employs the deflection of a probe beam propagating through the material to measure thermal and electronic diffusivities, carrier lifetime, and surface recombination. This deflection results from both the thermally and electronically induced changes in the local index of refraction of the semiconductor.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
