Abstract
Utilizing the inverse magnetostriction effect, magnetic tunneling junction (MTJ) elements have been demonstrated to also be useful as highly sensitive stress or strain transducers. The prediction of the stress dependent hysteresis of the tunneling magnetoresistance R is done by the energetic model (EM), minimizing the total magnetization work which consists of the Zeeman energy density, of magnetocrystalline and stress anisotropy of the magnetization rotation processes, and of reversible and irreversible contributions of domain wall displacements. Furthermore, the law of approach to saturation and the initial susceptibility relate the parameters of the EM to the effective anisotropy energy which has to be overcome for a magnetization reversal. The calculated R(H) curves are in good aggreement with the measurements, allowing several predictions of the MTJ parameters as magnetostriction constant, stress (strain) sensitivity and hysteresis, and misalignment of the easy axis.
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