Hysteresis in current transport in a GaAs diode containing self-assembled InAs quantum dots

Abstract

We have observed hysteresis loops in current transport in a GaAs metal–semiconductor–metal diode containing InAs quantum dots. The dots in our structure are directly embedded under the GaAs–metal interface. The charging and discharging of electrons in the dots modulate the current and produce hysteresis. These processes are controlled by the applied voltages. The dots are charged by forward current flowing through the structure. The discharging of the electrons is dominated by the tunneling process under high reverse bias. The modulated currents are well fitted with an electron-trapping model considering both the ground states and the excited states of the quantum dots.