Hysteresis effect in organic thin film transistors based on naphthalene tetracarboxylic diimide derivatives

Abstract

Controlling the hysteresis effect in organic field-effect transistors (OFETs) is imperative to attain reliable devices that can be applied to complicated circuits for practical applications. In this Letter, we compare two naphthalene tetracarboxylic diimide (NDI) derivatives, namely, N,N′-bis(4-trifluoromethoxybenzyl) naphthalene-1,4,5,8-tetracarboxylic acid diimide (NDI-BOCF3) and N,N′-bis(hexyl) naphthalene-1,4,5,8-tetracarboxylic acid diimide (NDI-C6), which are comprised of different side chains and exhibit significant variations in the hysteresis of electronic transfer potential caused by the electronic traps. Among them, NDI-BOCF3 manifests negligible hysteresis in OFETs, while the counterparts based on NDI-C6 show notable hysteresis. This work presents insight into the hysteresis phenomenon of NDIs in OFETs, which depends on various critical factors, including interfacial trap density, molecular structure, thin film growth mode, and surface energy. Particularly, NDI-C6 demonstrates two orders of magnitude higher interfacial trap density than that of NDI-BOCF3. Moreover, NDI-BOCF3 thin film displays small surface energy and higher surface coverage on the substrate, but the results are diametrically opposite in the case of NDI-C6. Considering these observations, we propose that the introduction of OCF3 group in NDI not only endues a well-matched surface energy that promotes uniform distribution of the thin film on n-Octyltrichlorosilane-modified SiO2 substrate but also provides a water-spelling feature which leads to fewer H2O/O2 absorption in the resulting thin films. Our findings offer a fundamental guideline to rationally design n-type organic semiconductors for the development of efficient OFETs with negligible hysteresis.