Abstract
The recycling of diamond wire cutting silicon waste (DWCSW) and the removal of heavy metal ions are very important for human life. Therefore, it is a promising method to improve the selective removal of heavy metal ions by etching and modifying organic functional groups for DWCSW. In this study, a new adsorbent PA-TEPA-GTS-NPSi was synthesized by Cu-assisted chemical etching and modified with 3-glycine dioxy-propyl trimethoxy-silane (3-GTS), tetraethylpentenediamine (TEPA) and hypophosphorous acid (H3PO2) for selective adsorption Hg(Ⅱ). PA-TEPA-GTS-NPSi showed excellent adsorption performance on Hg(Ⅱ), with adsorption capacity of 112.8 mg/g (pH=2.0, adsorption time=120 min). The pseudo-second-order model and Langmuir model can better describe the adsorption process, which proving that the adsorption process is chemisorption. The adsorption mechanism of Hg(Ⅱ) was studied by X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT). It was proved that the adsorption process was mainly caused by the strong adsorption between P and Hg(Ⅱ) in the phosphorus groups on the surface of PA-TEPA-GTS-NPSi adsorbent. Compared with other hypophosphorous acid functionalized adsorbents, the adsorption performance of the adsorbent is at a medium level, but it can effectively recycle DWCSW while removing heavy metal ions.
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