Abstract
Some of the physical and chemical properties of diamond make it an ideal material for optoelectronic devices capable of operating over a wide frequency bandwidth, with high thermal throughput, and at high operational temperatures. This has stimulated considerable research in using ion implantation methods to incorporate suitable dopant ions in the diamond lattice. Several hyperfine interaction methods have been applied to study the nature of the implantation sites of the different ions in diamond and the annealing of implantation-induced lattice damage. Recent investigations using 19F-time differential perturbed angular distributions (TDPADs), 12B β-NMR, 111In- and 181Hf-perturbed angular correlations (PACs), and Mössbauer studies using 57Co source, recoil-implanted 57Fe * and ion-implanted 57Mn *, are reviewed and their main results are presented.
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