Abstract
The fabrication of a single-crystal hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistor (MOSFET) with HfSiON/Al2O3 bilayer dielectric has been carried out. HfSiON and Al2O3 layers were deposited by sputtering-deposition (SD) and atomic layer deposition (ALD) techniques. The maximum output current for SD-HfSiON/ALD-Al2O3 was 36 mA mm−1, and for ALD-Al2O3, it was 31 mA mm−1. We reported that the hysteresis shift voltage of the bilayer dielectric MOSFET was one fourth of the single dielectric layer MOSFET. The leakage current density of SD-HfSiON/ALD-Al2O3 was one order of magnitude lower than the single layer dielectric. We also determined the dielectric constants of HfSiON/Al2O3 and Al2O3 dielectrics based on capacitance–voltage characteristics. The values of VTH, on/off ratio, subthreshold swing, and low field mobility for the bilayer dielectric MOSFET were evaluated to be 4.5 V, 105, 296 mV/decade, and 154 cm2 V−1 s−1, respectively.
Highlights
Diamond semiconductor has exceptional physical and electrical properties along with wide bandgap energy, high breakdown field, high carrier saturation velocity, high carrier mobility, and the highest thermal conductivity
FETs are fabricated with high-k oxide insulators; two techniques are commonly used to deposit these high-k insulators: sputtering deposition (SD) and atomic layer deposition (ALD)
We demonstrated the fabrication of metal-oxide-semiconductor field-effect transistor (MOSFET) with bilayer SD-HfSiON/Al2O3 layers were deposited layer deposition (ALD)-Al2O3 dielectrics and the electric properties were investigated for the device
Summary
Diamond semiconductor has exceptional physical and electrical properties along with wide bandgap energy, high breakdown field, high carrier saturation velocity, high carrier mobility, and the highest thermal conductivity. The fabrication of a single-crystal hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistor (MOSFET) with The the maximum output current for SD-HfSiON/ALD-Al2O3 hysteresis shift voltage of the bilayer dielectric MOSFET By sputtering-deposition (SD) and atomic was 36 mA mm−1, and for ALD-Al2O3, it was one fourth of the single dielectric layer
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
