Abstract
The binding energies as well as wave functions of hydrogenic impurities located in V-groove GaAs/AlxGa1-xAs quantum wires are calculated for different positions of the impurity inside the wires. The variational method is used and the carrier ground states are analytically calculated by an effective potential scheme together with a suitable coordinate transformation that allows the decoupling of the two-dimensional Schrodinger equation. The results are in good agreement with experimental points and other previous investigations.
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