Abstract

In the present work, We calculate the donor binding energy for a V-groove GaAs / Al x Ga 1 − x As quantum wire using a variational procedure within the effective mass approximation. We present a relation for the position-dependent effective mass in V-groove quantum wire which is a function of wire parameters. Calculations are presented with both constant effective mass and position-dependent effective masses for different dimensions of ridge quantum wire. We find that the position-dependent effective mass plays an important effect in the binding energy of the donor impurity in a ridge quantum wire. Also, we observe that the position-dependent effective mass in x-direction depends on all wire parameters, but in y-direction it depends on only one wire parameter.

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